View h03n60 datasheet:

Spec. No. : MOS200602HI-SINCERITYIssued Date : 2006.02.01Revised Date : 2006.02.07MICROELECTRONICS CORP.Page No. : 1/5H03N60 Series Pin AssignmentH03N60 SeriesTabN-Channel Power Field Effect Transistor3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: Source3This high voltage MOSFET uses an advanced termination scheme to 21provide enhanced voltage-blocking capability without degratdingperformance over time. In addition, this advanced MOSFET is designed to3-Lead Plastic TO-220FPwithstand high energy in avalanche and commutation modes. The newPackage Code: Fenergy efficient design also offers a drain-to-source diode with a fastPin 1: Gaterecovery time. Designed for high voltage, high speed switchingPin 2: Drainapplications in power supplies, converters and PWM motor controls,Pin 3: Sourcethese

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