View aod2610e datasheet:

isc N-Channel MOSFET Transistor AOD2610EFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV Gate-Source Voltage-Continuous 20 VGSI Drain Current-Continuous 46 ADI Drain Current-Single Pluse 110 ADMP Total Dissipation @T =25 59.5 WD CT Max. Operating Junction Temperature -55~150 JStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance, Junction to Case 2.1th j-c1isc webs

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