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View irfj240 datasheet:

irfj240irfj240

isc N-Channel MOSFET Transistor IRFJ240DESCRIPTIONDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.18(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 200 VDSS GSV Gate-Source Voltage 20 VGSI Drain Current-continuous@ TC=25 13 ADP Total Dissipation@TC=25 70 WtotT Max. Operating Junction Temperature -55~150 jT Storage Temperature Range -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance,Junction t

 

Keywords - ALL TRANSISTORS DATASHEET

 irfj240.pdf Design, MOSFET, Power

 irfj240.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfj240.pdf Database, Innovation, IC, Electricity

 

 
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