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View irfr7540 datasheet:

irfr7540irfr7540

isc N-Channel MOSFET Transistor IRFR7540, IIRFR7540FEATURESStatic drain-source on-resistance:RDS(on)4.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 110 ADI Drain Current-Single Pulsed 440 ADMP Total Dissipation @T =25 140 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 1.05Channel-to-ambient thermal resistance/WRth(j-a) 1101isc websitewww.iscsemi.cn isc & iscsemi is registered trademark

 

Keywords - ALL TRANSISTORS DATASHEET

 irfr7540.pdf Design, MOSFET, Power

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