View ipdh6n03lag datasheet:
IPDH6N03LA G IPFH6N03LA GIPSH6N03LA G IPUH6N03LA GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 6mDS(on),max Qualified according to JEDEC1) for target applicationI 50 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C operating temperature Pb-free lead plating; RoHS compliantType IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA GPackage PG-TO252-3-11 PG-TO252-3-23 PG-TO251-3-11 PG-TO251-3-1Marking H6N03LA H6N03LA H6N03LA H6N03LAMaximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitIContinuous drain current T =25 C2) 50 ADCT =100 C50CIPulsed drain current T =25 C3) 350D,pulseCEAvalanche energy, single pulse I =50
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ipdh6n03lag.pdf Design, MOSFET, Power
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