View ipt026n10n5 datasheet:

IPT026N10N5MOSFETHSOFOptiMOSTM 5 Power-Transistor, 100 VFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)1 N-channel, normal level 2345 100% avalanche tested678 Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Industrial ApplicationsDrainTabTable 1 Key Performance ParametersGatePin 1Parameter Value UnitSourceV 100 VDSPin 2-8R 2.6 mDS(on),maxI 202 ADQ 123 nCossQ (0V..10V) 96 nCGType / Ordering Code Package Marking Related LinksIPT026N10N5 PG-HSOF-8 026N10N5 -Final Data Sheet 1 Rev. 2.1, 2019-03-28OptiMOSTM 5 Power-Transistor, 100 VIPT026N10N5Table of ContentsDescription . . . . . . . . . . . . . . . .

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