View ph3230s datasheet:

PH3230SN-channel TrenchMOS intermediate level FETRev. 04 27 November 2009 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and benefits Low conduction losses due to low Simple gate drive required due to low on-state resistance gate charge Saves PCB space due to small Suitable for logic level gate drive footprint sources1.3 Applications Computer motherboards Notebook computers DC-to-DC convertors Switched-mode power supplies1.4 Quick reference dataTable 1. Quick referenceSymbol Parameter Conditions Min Typ Max UnitVDS drain-source voltage Tj 25 C; Tj 150 C - - 30 V

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