View bsp030 datasheet:

BSP030N-channel enhancement mode field-effect transistorRev. 04 26 July 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSP030 in SOT223.2. Features TrenchMOS technology Fast switching Low on-state resistance Logic level compatible Surface mount package.3. Applications Motor and actuator drivercc Battery management High speed, low resistance switch.4. Pinning informationTable 1: Pinning - SOT223, simplified outline and symbolPin Description Simplified outline Symbol1 gate (g)d42 drain (d)3 source (s)g4 drain (d)03ab4503ab301 2 3sSOT223N-channel MOSFET1. TrenchMOS is a trademark of Royal Philips Electronics.BSP030Philips SemiconductorsN-channel enhancement mode field-effect transistor5.

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