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View rhu002n06fra datasheet:

rhu002n06frarhu002n06fra

AEC-Q101 Qualified4V Drive Nch MOSFETRHU002N06FRAStructure Dimensions (Unit : mm)Silicon N-channelUMT3MOSFET transistor2.0 0.90.3 0.2 0.7(3)Features 1) Low on-resistance. (2) (1)2) High ESD. 0.65 0.653) High-speed switching. 0.151.34) Low-voltage drive (4V). (1) SourceEach lead has same dimensions5) Drive circuits can be simple. (2) GateAbbreviated symbol : KP6) Parallel use is easy. (3) DrainApplications SwitchingPackaging specifications Equivalent circuit (3)Package TapingCode T106Type Basic ordering unit (pieces) 3000RHU002N06RHU002N06FRA(2) 21(1) SourceAbsolute maximum ratings (Ta=25C)(1) (2) Gate1 ESD PROTECTION DIODE(3) Drain2 BODY DIODEParameter Symbol Limits Unit A protection diode has been built in between theDrain-source voltage VDSS 60 Vgate and

 

Keywords - ALL TRANSISTORS DATASHEET

 rhu002n06fra.pdf Design, MOSFET, Power

 rhu002n06fra.pdf RoHS Compliant, Service, Triacs, Semiconductor

 rhu002n06fra.pdf Database, Innovation, IC, Electricity

 

 
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