View fts2011 datasheet:

Ordering number:ENN6355N-Channel Silicon MOSFETFTS2011Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2147A Mounting height 1.1mm.[FTS2011]3.0 0.4250.65851 : Drain2 : Source3 : Source4 : Gate5 : Drain6 : Source147 : Source0.1258 : Drain0.25Specifications SANYO : TSSOP8Absolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID 8 ADrain Current (pulse) IDP PW 10s, duty cycle 1% 32 AMounted on a ceramic board (1000mm2 0.8mm)Allowable Power Dissipation PD 1.3 WCChannel Temperature Tch 150Storage Temperature Tstg 55 to +150 CElectrical Characteristics at Ta = 25CRatingsParameter Symbol Conditions Unitmin typ maxDrain-to-Source Break

Keywords - ALL TRANSISTORS DATASHEET

 fts2011.pdf Design, MOSFET, Power

 fts2011.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fts2011.pdf Database, Innovation, IC, Electricity