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PB5A2BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 4.5V20V 11A100% RG TestPDFN 2X2S 100% UIL TestABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 20 VVGSGate-Source Voltage 8 VTA = 25 C11IDContinuous Drain CurrentTA= 70 C9 AIDM33Pulsed Drain Current1TA = 25 C2PDPower Dissipation WTA = 70 C1.3TJ, TstgOperating Junction & Storage Temperature Range -55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSRqJA 60 C / WJunction-to-Ambient21Pulse width limited by maximum junction temperature.2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper.REV 1.0 1 2015/8/12PB5A2BAN-Channel Enhancement Mode MOSFET

 

Keywords - ALL TRANSISTORS DATASHEET

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