View pd548ba datasheet:

PD548BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4.6m @VGS = 10V30V 85ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC = 25 C85IDContinuous Drain Current2TC = 100 C54AIDM170Pulsed Drain Current1IASAvalanche Current 38EASAvalanche Energy L =0.1mH 72 mJTC = 25 C59PDPower Dissipation WTC = 100 C23TJ, TstgJunction & Storage Temperature Range -55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSJunction-to-Case RqJC 2.1C / WJunction-to-Ambient RqJA 62.51Pulse width limited by maximum junction temperature.2Calculated continuous current based on maximum allowable junction temperature,Package limitatio

Keywords - ALL TRANSISTORS DATASHEET

 pd548ba.pdf Design, MOSFET, Power

 pd548ba.pdf RoHS Compliant, Service, Triacs, Semiconductor

 pd548ba.pdf Database, Innovation, IC, Electricity