All Transistors. Datasheet

 

View sub85n10-10 datasheet:

sub85n10-10sub85n10-10

SUP85N10-10, SUB85N10-10Vishay SiliconixN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.0105 at VGS = 10 V Compliant to RoHS Directive 2002/95/EC10085a0.012 at VGS = 4.5 V TO-220ABD TO-263G DRAIN connected to TAB G D S Top ViewS G D S SUB85N10-10Top ViewN-Channel MOSFETSUP85N10-10ORDERING INFORMATIONPackage Lead (Pb)-free TO-220AB SUP85N10-10-E3TO-263 SUB85N10-10-E3ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise notedParameter Symbol Limit UnitVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C 85aContinuous Drain Current (TJ = 150 C) IDTC = 125 C 60aAIDM240Pulsed Drain Current IASAvalanche Current 75L = 0.1 mHmJEAS280Single Pulse Avalanche Energy

 

Keywords - ALL TRANSISTORS DATASHEET

 sub85n10-10.pdf Design, MOSFET, Power

 sub85n10-10.pdf RoHS Compliant, Service, Triacs, Semiconductor

 sub85n10-10.pdf Database, Innovation, IC, Electricity

 

 
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