All Transistors. Datasheet

 

View sum36n20-54p datasheet:

sum36n20-54psum36n20-54p

SUM36N20-54PVishay SiliconixN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) () ID (A) Qg (Typ.) 175 C Junction TemperatureRoHS 0.053 at VGS = 15 V 36200 57 COMPLIANT 100 % Rg and UIS Tested0.054 at VGS = 10 V 36 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply Lighting SystemsDTO-263GG D SSTop ViewN-Channel MOSFETOrdering Information: SUM36N20-54P-E3 (Lead (Pb)-free)ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbol Limit UnitDrain-Source Voltage VDS 200VGate-Source Voltage VGS 25TC = 25 C 36Continuous Drain Current (TJ = 175 C) IDTC = 100 C 22.6APulsed Drain Current IDM 80Single Pulse Avalanche Current IAS 20L = 0.1 mHSingle Pulse Avalanche EnergyaEAS 20 mJTC = 25 C 166bMaximum P

 

Keywords - ALL TRANSISTORS DATASHEET

 sum36n20-54p.pdf Design, MOSFET, Power

 sum36n20-54p.pdf RoHS Compliant, Service, Triacs, Semiconductor

 sum36n20-54p.pdf Database, Innovation, IC, Electricity

 

 
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