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2sc3638

Ordering number:EN1637C NPN Triple Diffused Planar Silicon Transistor 2SC3638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions � High reliability (Adoption of HVP process). unit:mm � Fast speed. 2022A � High breakdown voltage. [2SC3638] � Adoption of MBIT process. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 900 V Collector-to-Emitter Voltage VCEO 500 V Emitter-to-Base Voltage VEBO 7 V Collector Current IC 15 A Collector Current (Pulse) ICP 25 A Collector Dissipation PC Tc=25?C 100 W Junction Temperature Tj 150 ?C Storage Temperature Tstg �55 to +150 ?C Electrical Characteristi

Keywords

 2sc3638 Datasheet, Design, MOSFET, Power

 2sc3638 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc3638 Database, Innovation, IC, Electricity

 

 
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