View 2sc5452 datasheet:

Ordering number:EN5957A NPN Triple Diffused Planar Silicon Transistor 2SC5452 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions � High speed. unit:mm � High breakdown voltage (VCBO=1600V). 2039D � High reliability (Adoption of HVP process). [2SC5452] � Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 20 A Collector Current (Pulse) ICP 40 A Collector Dissipation PC 3 W Tc=25?C 75 W Junction Tempera