View bd678a datasheet:

BD676A/678A/680A/682 Medium Power Linear and Switching Applications � Medium Power Darlington TR � Complement to BD675A, BD677A, BD679A and BD681 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25�C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD676A - 45 V : BD678A - 60 V : BD680A - 80 V : BD682 - 100 V VCEO Collector-Emitter Voltage : BD676A - 45 V : BD678A - 60 V : BD680A - 80 V : BD682 - 100 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 4 A ICP *Collector Current (Pulse) - 6 A IB Base Current - 100 mA PC Collector Dissipation (TC=25�C) 14 W R?ja Thermal Resistance (Junction to Ambient) 88 �C/W TJ Junction Temperature 150 �C TSTG Sto