View buk573-48c 1 datasheet:

Philips Semiconductors Product specification PowerMOS transistor BUK573-48C Clamped logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel enhancement SYMBOL PARAMETER MIN. TYP. MAX. UNIT mode logic level field-effect power transistor in a plastic full-pack V(CL)DSR Drain-source clamp voltage 40 48 58 V envelope. ID Drain current (DC) 13 A The device is intended for use in Ptot Total power dissipation 25 W automotive applications. It has WDSRR Repetitive clamped turn off 50 mJ built-in zener diodes providing active energy; Tj = 150?C drain voltage clamping. RDS(ON) Drain-source on-state 85 m? resistance; VGS = 5 V PINNING - SOT186A PIN CONFIGURATION SYMBOL PIN DESCRIPTION d case 1 gate 2 drain g 3 source case isolated 1 2 3 s LIMITING VALUES