View dse010 datasheet:

Ordering number:EN4705 DSE010 Silicon Epitaxial Planar Type Very High-Speed Switching Diode Features Package Dimensions � Ideally suited for use in hybrid ICs because of very unit:mm small-sized package. 1260 � Fast switching speed. [DSE010] � Small interterminal capacitance. A:Anode C:Cathode Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Peak Reverse Voltage VRM 90 V Reverse Voltage VR 80 V Peak Forward Current IFM 1 �s 225 mA Average Rectified Current IO 100 mA Surge Forward Current IFSM 500 mA ?C Junction Temperature Tj 125 Storage Temperature Tstg �55 to +125 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Forward Voltage VF IF=100mA 1.2 V Reverse Current IR