View irfm210a sam datasheet:

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 0.77 A Improved Gate Charge Extended Safe Operating Area � Lower Leakage Current : 10 A (Max.) @ VDS = 200V 2 Low RDS(ON) : 1.169 ? (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 200 Continuous Drain Current (TA=25 oC ) 0.77 ID A Continuous Drain Current (TA=70 oC ) 0.61 IDM Drain Current-Pulsed 1 6 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 40 O IAR Avalanche Current 1 A 0.77 O EAR Repetitive Avalanche Energy 1 0.2 mJ O dv/dt Peak Diode Recovery dv/dt 3 5.0 V/ns O 2 W PD Total Powe