View mrf555re datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF555/D The RF Line NPN Silicon MRF555 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. � Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) 1.5 W, 470 MHz Efficiency 60% (Typ) RF LOW POWER � Cost Effective PowerMacro Package TRANSISTOR � Electroless Tin Plated Leads for Improved Solderability NPN SILICON � Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Symbol Value Unit Collector�Emitter Voltage VCEO 16 Vdc Collector�Base Voltage VCBO 36 Vdc Emitter�Base Voltage VEBO 4.0 Vdc Collector Current � Continuous IC 400 mA