View mrf837re datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF837/D The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. � Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSISTOR � Low Cost Macro�X Plastic Package or SORF Plastic Surface Mounted NPN SILICON Package � State�of�the�Art Technology Fine Line Geometry Gold Top Metal and Wires Silicon Nitride Passivated Ion Implanted Arsenic Emitters CASE 317�01, STYLE 2 � Circuit board photomaster available upon request by contacting MACRO�X RF Tactical Marketing in Phoenix, AZ. MRF837 � MRF8372 available