View std2nb60 datasheet:

STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESH? MOSFET TYPE V R I DSS DS(on) D STD2NB60 600 V < 3.6 ? 2.6 A TYPICAL R = 3.3 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process, SGS-Thomson has designed an advanced family of power MOSFETs with IPAK DPAK outstanding performances. The new patent TO-251 TO-252 pending strip layout coupled with the Company�s (Suffix �-1�) (Suffix �T4�) proprietary edge termination structure, gives the lowest R per area, exceptional avalanche DS(on) and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS SWITCH MODE POWER SUPP