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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

stn1nc60

STN1NC60 N-CHANNEL 600V - 12? - 0.3A - SOT-223 PowerMesh�II MOSFET TYPE VDSS RDS(on) ID STN1NC60 600 V <15? 0.3 A 2 TYPICAL RDS(on) = 12? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 NEW HIGH VOLTAGE BENCHMARK 2 GATE CHARGE MINIMIZED 1 DESCRIPTION SOT-223 The PowerMESH�II is the evolution of the first generation of MESH OVERLAY�. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate INTERNAL SCHEMATIC DIAGRAM charge and ruggedness. APPLICATIONS AC ADAPTORS AND BATTERY CHARGERS SWITH MODE POWER SUPPLIES (SMPS) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS =

Keywords

 stn1nc60 Datasheet, Design, MOSFET, Power

 stn1nc60 RoHS, Compliant, Service, Triacs, Semiconductor

 stn1nc60 Database, Innovation, IC, Electricity

 

 
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