View stp6nb80 datasheet:

STP6NB80 STP6NB80FP N-CHANNEL 800V - 1.6? - 5.7A TO-220/TO-220FP PowerMesh� MOSFET TYPE VDSS RDS(on) ID STP6NB80 800 V < 1.9 ? 5.7 A STP6NB80FP 800 V < 1.9 ? 5.7 A TYPICAL RDS(on) = 1.6 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 2 2 VERY LOW INTRINSIC CAPACITANCES 1 1 TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAY� process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company�s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, INTERNAL SCHEMATIC DIAGRAM exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS HIGH CURRENT, HI