View ktb2510 2sb2510 err datasheet:

SEMICONDUCTOR KTB2510 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH POWER AMPLIFIER A Q B DARLINGTON APPLICATION. K FEATURES ·Complementary to KTD1510 DIM MILLIMETERS ·Recommended for 60W Audio Amplifier Output Stage. A 15.9 MAX B 4.8 MAX _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 MAXIMUM RATING (Ta=25℃) G 3.3 MAX d H 9.0 CHARACTERISTIC SYMBOL RATING UNIT I 4.5 P PT J 2.0 M VCBO -160 V Collector-Base Voltage K 1.8 MAX _ + L 20.5 0.5 M 2.8 VCEO -150 V Collector-Emitter Voltage _ P 5.45 + 0.2 1 2 3 _ Φ3.2 0.2 Q + VEBO Emitter-Base Voltage -5 V T 0.6+0.3/-0.1 1. BASE IC Collector Current -10 A 2. COLLECTOR (HEAT SINK) IB Base Current -1 A 3. EMITTER PC 100 W Collector Power Dissipation (Tc=25℃) Tj Junctio