Alle MOSFET. FQI4N90 Datenblatt

 

FQI4N90 MOSFET. Höchstzulässige Werte. Charakteristische Werte. Datenblatt

Typenbezeichnung: FQI4N90

Typ von Feldeffekttransistors: MOSFET

Kanaltyp: N

Gesamt-Verlustleistung (Pd): 140 W

Maximale Drain-Source-Spannung (Vds): 900 V

Maximale Gate-Source-Spannung (Vgs): 30 V

Maximaler Drainstrom (Id): 4.2 A

Höchste Sperrschichttemperatur (Tj): 150 °C

Gate-Ladung (Qg): 24 nC

Ausgangswiderstand RDS(on): 3.1 Ohm

Transistorgehäuse: TO262_I2PAK

Ersatz (vergleichstyp) für FQI4N90 Transistor

 

FQI4N90 Datasheet (PDF)

1.1. fqi4n90.pdf Size:821K _fairchild_semi

FQI4N90
FQI4N90

November 2013 FQI4N90 N-Channel QFET® MOSFET 900 V, 4.2 A, 3.3 Ω Description Features This N-Channel enhancement mode power MOSFET is • 4.2 A, 900 V, RDS(on) = 3.3 Ω (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar ID = 2.1 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 24 nC) technology has been especially tai

1.2. fqi4n90tu.pdf Size:644K _fairchild_semi

FQI4N90
FQI4N90

October 2001 TM QFET FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typically 24 nC) planar stripe, DMOS technology. • Low Crss ( typically 9.5 pF) This advanced technology has been es

 5.1. fqi4n25tu.pdf Size:726K _fairchild_semi

FQI4N90
FQI4N90

May 2000 TM QFET QFET QFET QFET FQB4N25 / FQI4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.6A, 250V, RDS(on) = 1.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.8 pF) This advanced technology

5.2. fqb4n20 fqi4n20.pdf Size:704K _fairchild_semi

FQI4N90
FQI4N90

April 2000 TM QFET QFET QFET QFET FQB4N20 / FQI4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.6A, 200V, RDS(on) = 1.4? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been esp

 5.3. fqb4n80 fqi4n80.pdf Size:8196K _fairchild_semi

FQI4N90
FQI4N90

October 2008 QFET FQB4N80 / FQI4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.9A, 800V, RDS(on) = 3.6? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 8.6 pF) This advanced technology has been especially tailored to

5.4. fqi4n20tu.pdf Size:698K _fairchild_semi

FQI4N90
FQI4N90

April 2000 TM QFET QFET QFET QFET FQB4N20 / FQI4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.6A, 200V, RDS(on) = 1.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology

Anderen MOSFET... FQH44N10 , FDS4480 , FQH8N100C , FQI13N50C , FQI27N25 , FQI27N25TU_F085 , FQI4N80 , IRFW630B , IRFP460 , FQI50N06 , FQI5N60C , IRF644B , FQI7N60 , IRF634B , FQI7N80 , FDC6392S , FQI8N60C .

 
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