All MOSFET. FQI4N90 Datasheet

 

FQI4N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQI4N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 140 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 4.2 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 24 nC

Maximum Drain-Source On-State Resistance (Rds): 3.1 Ohm

Package: TO262, I2PAK

FQI4N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQI4N90 Datasheet (PDF)

1.1. fqi4n90.pdf Size:821K _fairchild_semi

FQI4N90
FQI4N90

November 2013 FQI4N90 N-Channel QFET® MOSFET 900 V, 4.2 A, 3.3 Ω Description Features This N-Channel enhancement mode power MOSFET is • 4.2 A, 900 V, RDS(on) = 3.3 Ω (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar ID = 2.1 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 24 nC) technology has been especially tai

1.2. fqi4n90tu.pdf Size:644K _fairchild_semi

FQI4N90
FQI4N90

October 2001 TM QFET FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typically 24 nC) planar stripe, DMOS technology. • Low Crss ( typically 9.5 pF) This advanced technology has been es

 5.1. fqi4n20tu.pdf Size:698K _fairchild_semi

FQI4N90
FQI4N90

April 2000 TM QFET QFET QFET QFET FQB4N20 / FQI4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.6A, 200V, RDS(on) = 1.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology

5.2. fqb4n80 fqi4n80.pdf Size:8196K _fairchild_semi

FQI4N90
FQI4N90

October 2008 QFET FQB4N80 / FQI4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.9A, 800V, RDS(on) = 3.6? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 8.6 pF) This advanced technology has been especially tailored to

 5.3. fqi4n25tu.pdf Size:726K _fairchild_semi

FQI4N90
FQI4N90

May 2000 TM QFET QFET QFET QFET FQB4N25 / FQI4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.6A, 250V, RDS(on) = 1.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.8 pF) This advanced technology

5.4. fqb4n20 fqi4n20.pdf Size:704K _fairchild_semi

FQI4N90
FQI4N90

April 2000 TM QFET QFET QFET QFET FQB4N20 / FQI4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.6A, 200V, RDS(on) = 1.4? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been esp

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top