Справочник MOSFET. FQI4N90

 

FQI4N90 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQI4N90
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 140 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.1 Ohm
   Тип корпуса: TO262 I2PAK
     - подбор MOSFET транзистора по параметрам

 

FQI4N90 Datasheet (PDF)

 ..1. Size:821K  fairchild semi
fqi4n90.pdfpdf_icon

FQI4N90

November 2013FQI4N90N-Channel QFET MOSFET900 V, 4.2 A, 3.3 Description FeaturesThis N-Channel enhancement mode power MOSFET is 4.2 A, 900 V, RDS(on) = 3.3 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = 2.1 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 24 nC)technology has been especially tai

 0.1. Size:644K  fairchild semi
fqb4n90tm fqi4n90tu.pdfpdf_icon

FQI4N90

October 2001TMQFETFQB4N90 / FQI4N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.2A, 900V, RDS(on) = 3.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typically 24 nC)planar stripe, DMOS technology. Low Crss ( typically 9.5 pF)This advanced technology has been es

 9.1. Size:726K  fairchild semi
fqb4n25tm fqi4n25tu.pdfpdf_icon

FQI4N90

May 2000TMQFETQFETQFETQFETFQB4N25 / FQI4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology

 9.2. Size:8196K  fairchild semi
fqb4n80 fqi4n80.pdfpdf_icon

FQI4N90

October 2008QFETFQB4N80 / FQI4N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.9A, 800V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 8.6 pF)This advanced technology has been especially

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History: STP4407 | IRF740PBF | SSF6014J8 | FQI15P12TU | WMB115N15HG4 | MTDK3S6R | SSM3K15AMFV

 

 
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