FQI4N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQI4N90

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 140 W

Tensión drenaje-fuente (Vds): 900 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 4.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 24 nC

Resistencia drenaje-fuente RDS(on): 3.1 Ohm

Empaquetado / Estuche: TO262, I2PAK

Búsqueda de reemplazo de MOSFET FQI4N90

FQI4N90 Datasheet (PDF)

1.1. fqi4n90.pdf Size:821K _fairchild_semi

November 2013 FQI4N90 N-Channel QFET® MOSFET 900 V, 4.2 A, 3.3 Ω Description Features This N-Channel enhancement mode power MOSFET is • 4.2 A, 900 V, RDS(on) = 3.3 Ω (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary planar ID = 2.1 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 24 nC) technology has been especially tai

1.2. fqi4n90tu.pdf Size:644K _fairchild_semi

October 2001 TM QFET FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typically 24 nC) planar stripe, DMOS technology. • Low Crss ( typically 9.5 pF) This advanced technology has been es

5.1. fqi4n25tu.pdf Size:726K _fairchild_semi

May 2000 TM QFET QFET QFET QFET FQB4N25 / FQI4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.6A, 250V, RDS(on) = 1.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.8 pF) This advanced technology

5.2. fqb4n20 fqi4n20.pdf Size:704K _fairchild_semi

April 2000 TM QFET QFET QFET QFET FQB4N20 / FQI4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect � 3.6A, 200V, RDS(on) = 1.4? @VGS = 10 V transistors are produced using Fairchild�s proprietary, � Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. � Low Crss ( typical 5.0 pF) This advanced technology has been esp

5.3. fqb4n80 fqi4n80.pdf Size:8196K _fairchild_semi

October 2008 QFET� FQB4N80 / FQI4N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect � 3.9A, 800V, RDS(on) = 3.6? @VGS = 10 V transistors are produced using Fairchild�s proprietary, � Low gate charge ( typical 19 nC) planar stripe, DMOS technology. � Low Crss ( typical 8.6 pF) This advanced technology has been especially tailored to

5.4. fqi4n20tu.pdf Size:698K _fairchild_semi

April 2000 TM QFET QFET QFET QFET FQB4N20 / FQI4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.6A, 200V, RDS(on) = 1.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology

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