FQI4N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQI4N90
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 140 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.1 Ohm
Paquete / Cubierta: TO262 I2PAK
Búsqueda de reemplazo de FQI4N90 MOSFET
FQI4N90 Datasheet (PDF)
fqi4n90.pdf

November 2013FQI4N90N-Channel QFET MOSFET900 V, 4.2 A, 3.3 Description FeaturesThis N-Channel enhancement mode power MOSFET is 4.2 A, 900 V, RDS(on) = 3.3 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = 2.1 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 24 nC)technology has been especially tai
fqb4n90tm fqi4n90tu.pdf

October 2001TMQFETFQB4N90 / FQI4N90900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.2A, 900V, RDS(on) = 3.3 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typically 24 nC)planar stripe, DMOS technology. Low Crss ( typically 9.5 pF)This advanced technology has been es
fqb4n25tm fqi4n25tu.pdf

May 2000TMQFETQFETQFETQFETFQB4N25 / FQI4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.6A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology
fqb4n80 fqi4n80.pdf

October 2008QFETFQB4N80 / FQI4N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.9A, 800V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 8.6 pF)This advanced technology has been especially
Otros transistores... FQH44N10 , FDS4480 , FQH8N100C , FQI13N50C , FQI27N25 , FQI27N25TUF085 , FQI4N80 , IRFW630B , IRF1404 , FQI50N06 , FQI5N60C , IRF644B , FQI7N60 , IRF634B , FQI7N80 , FDC6392S , FQI8N60C .
History: 2N5486 | STP36N06LFI
History: 2N5486 | STP36N06LFI



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