SKM200GB063D Todos los transistores

 

SKM200GB063D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SKM200GB063D
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 875 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 260 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 70 nS
   Coesⓘ - Capacitancia de salida, typ: 1250 pF
   Paquete / Cubierta: MODULE

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SKM200GB063D Datasheet (PDF)

 ..1. Size:623K  semikron
skm200gb063d.pdf

SKM200GB063D
SKM200GB063D

 6.1. Size:713K  semikron
skm200gb124d.pdf

SKM200GB063D
SKM200GB063D

 6.2. Size:378K  semikron
skm200gb12e4.pdf

SKM200GB063D
SKM200GB063D

SKM200GB12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GB12E4Tc =80C 172 A

 6.3. Size:939K  semikron
skm200gbd123d1s.pdf

SKM200GB063D
SKM200GB063D

SEMITRANS MAbsolute Maximum Ratings ValuesIGBT ModulesSymbol Conditions 1) UnitsV 1200 VCESSKM 200 GBD 123 D 1SV R = 20 k 1200 VCGR GEI T = 25/80 C 200 / 180 AC caseI Tcase = 25/80 C; tp = 1 ms 400 / 360 ACMVGES 20 VPtot per IGBT, Tcase = 25 C 1380 WT , (T ) 40 . . .+150 (125) Cj stgVisol AC, 1 min. 2 500 7) Vhumidity DIN 40 040 Class Fc

 6.4. Size:720K  semikron
skm200gb174d.pdf

SKM200GB063D
SKM200GB063D

 6.5. Size:675K  semikron
skm200gb173d.pdf

SKM200GB063D
SKM200GB063D

 6.6. Size:379K  semikron
skm200gb12t4.pdf

SKM200GB063D
SKM200GB063D

SKM200GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GB12T4Tc =80C

 6.7. Size:684K  semikron
skm200gb125d.pdf

SKM200GB063D
SKM200GB063D

 6.8. Size:675K  semikron
skm200gb176d.pdf

SKM200GB063D
SKM200GB063D

 6.9. Size:664K  semikron
skm200gb126d.pdf

SKM200GB063D
SKM200GB063D

 6.10. Size:635K  semikron
skm200gb123d.pdf

SKM200GB063D
SKM200GB063D

 6.11. Size:446K  semikron
skm200gb12v.pdf

SKM200GB063D
SKM200GB063D

SKM200GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 311 ATj = 175 CTc =80C 237 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 3tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GB12VTc =80C 172 AIFnom

Otros transistores... SKM195GB124DN , SKM200GA123D , SKM200GAL123D , SKM200GAL173D , SKM200GAR123D , SKM200GAR173D , SKM200GAX173D , SKM200GAY173D , SGT40N60NPFDPN , SKM200GB123D , SKM200GB124D , SKM200GB173D , SKM200GB174D , SKM200GBD123D1S , FGH50N6S2D , SKM22GD123D , SKM300GA123D .

 

 
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