SKM200GB063D - аналоги и описание IGBT

SKM200GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 314 A Tj = 175 C Tc =80 C 242 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 229 A Tj = 175 C SKM200GB12E4 Tc =80 C 172 A

SEMITRANS M Absolute Maximum Ratings Values IGBT Modules Symbol Conditions 1) Units V 1200 V CES SKM 200 GBD 123 D 1S V R = 20 k 1200 V CGR GE I T = 25/80 C 200 / 180 A C case I Tcase = 25/80 C; tp = 1 ms 400 / 360 A CM VGES 20 V Ptot per IGBT, Tcase = 25 C 1380 W T , (T ) 40 . . .+150 (125) C j stg Visol AC, 1 min. 2 500 7) V humidity DIN 40 040 Class F c

SKM200GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 314 A Tj = 175 C Tc =80 C 242 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 229 A Tj = 175 C SKM200GB12T4 Tc =80 C

SKM200GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 311 A Tj = 175 C Tc =80 C 237 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 3 tpsc VGE 20 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 229 A Tj = 175 C SKM200GB12V Tc =80 C 172 A IFnom