SKM200GB063D Spec and Replacement, IGBT Equivalent Finder, Cross Reference

SKM200GB063D Specs and Replacement

Type Designator: SKM200GB063D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 875 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 260 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 70 nS

Coesⓘ - Output Capacitance, typ: 1250 pF

Package: MODULE

SKM200GB063D Substitution

- IGBTⓘ Cross-Reference Search

SKM200GB063D datasheet

..1. Size:623K semikron
skm200gb063d.pdf pdf_icon

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6.1. Size:713K semikron
skm200gb124d.pdf pdf_icon

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6.2. Size:378K semikron
skm200gb12e4.pdf pdf_icon

SKM200GB12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25 C 314 A Tj = 175 C Tc =80 C 242 A ICnom 200 A ICRM ICRM = 3xICnom 600 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 3 tpsc VGE 15 V Tj = 150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 229 A Tj = 175 C SKM200GB12E4 Tc =80 C 172 A... See More ⇒

6.3. Size:939K semikron
skm200gbd123d1s.pdf pdf_icon

SEMITRANS M Absolute Maximum Ratings Values IGBT Modules Symbol Conditions 1) Units V 1200 V CES SKM 200 GBD 123 D 1S V R = 20 k 1200 V CGR GE I T = 25/80 C 200 / 180 A C case I Tcase = 25/80 C; tp = 1 ms 400 / 360 A CM VGES 20 V Ptot per IGBT, Tcase = 25 C 1380 W T , (T ) 40 . . .+150 (125) C j stg Visol AC, 1 min. 2 500 7) V humidity DIN 40 040 Class F c... See More ⇒