SKM200GB174D Todos los transistores

 

SKM200GB174D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SKM200GB174D
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 1400
   Tensión máxima colector-emisor |Vce|, V: 1700
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 250
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 3.1
   Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 60
   Capacitancia de salida (Cc), typ, pF: 1500
   Paquete / Cubierta: MODULE

 Búsqueda de reemplazo de SKM200GB174D - IGBT

 

SKM200GB174D Datasheet (PDF)

 ..1. Size:720K  semikron
skm200gb174d.pdf

SKM200GB174D SKM200GB174D

 4.1. Size:675K  semikron
skm200gb173d.pdf

SKM200GB174D SKM200GB174D

 4.2. Size:675K  semikron
skm200gb176d.pdf

SKM200GB174D SKM200GB174D

 5.1. Size:713K  semikron
skm200gb124d.pdf

SKM200GB174D SKM200GB174D

 5.2. Size:378K  semikron
skm200gb12e4.pdf

SKM200GB174D SKM200GB174D

SKM200GB12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GB12E4Tc =80C 172 A

 5.3. Size:379K  semikron
skm200gb12t4.pdf

SKM200GB174D SKM200GB174D

SKM200GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 314 ATj = 175 CTc =80C 242 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GB12T4Tc =80C

 5.4. Size:684K  semikron
skm200gb125d.pdf

SKM200GB174D SKM200GB174D

 5.5. Size:664K  semikron
skm200gb126d.pdf

SKM200GB174D SKM200GB174D

 5.6. Size:635K  semikron
skm200gb123d.pdf

SKM200GB174D SKM200GB174D

 5.7. Size:446K  semikron
skm200gb12v.pdf

SKM200GB174D SKM200GB174D

SKM200GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 311 ATj = 175 CTc =80C 237 AICnom 200 AICRM ICRM = 3xICnom 600 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 3tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 229 ATj = 175 CSKM200GB12VTc =80C 172 AIFnom

Otros transistores... SKM200GAR123D , SKM200GAR173D , SKM200GAX173D , SKM200GAY173D , SKM200GB063D , SKM200GB123D , SKM200GB124D , SKM200GB173D , RJP30E2DPP-M0 , SKM200GBD123D1S , FGH50N6S2D , SKM22GD123D , SKM300GA123D , SKM300GA173D , SKM300GAL063D , SKM300GAL123D , SKM300GAR063D .

 

 
Back to Top

 


SKM200GB174D
  SKM200GB174D
  SKM200GB174D
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ

 

 

 
Back to Top