SKM200GB174D PDF and Equivalents Search

 

SKM200GB174D Specs and Replacement

Type Designator: SKM200GB174D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1400 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 250 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃

tr ⓘ - Rise Time, typ: 60 nS

Coesⓘ - Output Capacitance, typ: 1500 pF

Package: MODULE

 SKM200GB174D Substitution

- IGBTⓘ Cross-Reference Search

 

SKM200GB174D datasheet

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 5.1. Size:713K  semikron
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Specs: SKM200GAR123D, SKM200GAR173D, SKM200GAX173D, SKM200GAY173D, SKM200GB063D, SKM200GB123D, SKM200GB124D, SKM200GB173D, FGA25N120ANTD, SKM200GBD123D1S, FGH50N6S2D, SKM22GD123D, SKM300GA123D, SKM300GA173D, SKM300GAL063D, SKM300GAL123D, SKM300GAR063D

Keywords - SKM200GB174D transistor spec

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