SKM500GA123S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SKM500GA123S

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 3000W

Tensión colector-emisor (Vce): 1200V

Voltaje de saturación colector-emisor (Vce sat): 2.8V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 500A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche:

Búsqueda de reemplazo de SKM500GA123S - IGBT

SKM500GA123S Datasheet (PDF)

1.1. skm500ga123d.pdf Size:596K _igbt



5.1. skm50gb12t4.pdf Size:459K _igbt

SKM50GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 81 A Tj = 175 °C Tc =80°C 62 A ICnom 50 A ICRM ICRM = 3xICnom 150 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®2 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 65 A Tj = 175 °C SKM50GB12T4 Tc =80°C 49 A

5.2. skm50gb063d.pdf Size:463K _igbt

SKM50GB063D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 600 V IC Tc =25°C 70 A Tj = 150 °C Tc =75°C 51 A ICnom 50 A ICRM ICRM = 2xICnom 100 A VGES -20 ... 20 V VCC = 300 V SEMITRANS® 2 tpsc VGE ≤ 20 V Tj = 125 °C 10 µs VCES ≤ 600 V Tj -55 ... 150 °C Superfast NPT-IGBT Inverse diode Modules IF Tc =25°C 75 A Tc =80°C 45 A SKM50GB0

 5.3. skm50gal12t4.pdf Size:498K _igbt

SKM50GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 81 A Tj = 175 °C Tc =80°C 62 A ICnom 50 A ICRM ICRM = 3xICnom 150 A VGES -20 ... 20 V VCC = 800 V SEMITRANS® 2 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 65 A Tj = 175 °C SKM50GAL12T4 Tc

5.4. skm50gal123d.pdf Size:758K _igbt



 5.5. skm50gb123d.pdf Size:758K _igbt



5.6. skm50gb12v.pdf Size:382K _igbt

SKM50GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 79 A Tj = 175 °C Tc =80°C 60 A ICnom 50 A ICRM ICRM = 3xICnom 150 A VGES -20 ... 20 V VCC = 720 V SEMITRANS® 2 tpsc VGE ≤ 15 V Tj = 125 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Inverse diode IF Tc =25°C 65 A Tj = 175 °C SKM50GB12V Tc =80°C 49 A IFnom 50 A Target Da

Otros transistores... SKM400GAR124D , SKM400GB062D , SKM400GB123D , SKM400GB124D , SKM40GD123D , SKM40GD124D , SKM40GDL123D , SKM500GA123D , IRG4PH50UD , SKM500GA124D , SKM500GA174D , SKM50GAL123D , SKM50GB063D , SKM50GB123D , SKM50GD063DL , SKM50GDL063DL , SKM50GH063DL .