All IGBT. SKM500GA123S Datasheet

 

SKM500GA123S IGBT. Datasheet pdf. Equivalent

Type Designator: SKM500GA123S

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 3000W

Maximum Collector-Emitter Voltage |Vce|, V: 1200V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.8V

Maximum Collector Current |Ic|, A: 500A

Maximum Junction Temperature (Tj), °C: 150

SKM500GA123S Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SKM500GA123S Datasheet (PDF)

1.1. skm500ga123d.pdf Size:596K _igbt

SKM500GA123S
SKM500GA123S



5.1. skm50gb12t4.pdf Size:459K _igbt

SKM500GA123S
SKM500GA123S

SKM50GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 81 A Tj = 175 °C Tc =80°C 62 A ICnom 50 A ICRM ICRM = 3xICnom 150 A VGES -20 ... 20 V VCC = 800 V SEMITRANS®2 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 65 A Tj = 175 °C SKM50GB12T4 Tc =80°C 49 A

5.2. skm50gb063d.pdf Size:463K _igbt

SKM500GA123S
SKM500GA123S

SKM50GB063D Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 600 V IC Tc =25°C 70 A Tj = 150 °C Tc =75°C 51 A ICnom 50 A ICRM ICRM = 2xICnom 100 A VGES -20 ... 20 V VCC = 300 V SEMITRANS® 2 tpsc VGE ≤ 20 V Tj = 125 °C 10 µs VCES ≤ 600 V Tj -55 ... 150 °C Superfast NPT-IGBT Inverse diode Modules IF Tc =25°C 75 A Tc =80°C 45 A SKM50GB0

5.3. skm50gal12t4.pdf Size:498K _igbt

SKM500GA123S
SKM500GA123S

SKM50GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25°C 1200 V IC Tc =25°C 81 A Tj = 175 °C Tc =80°C 62 A ICnom 50 A ICRM ICRM = 3xICnom 150 A VGES -20 ... 20 V VCC = 800 V SEMITRANS® 2 tpsc VGE ≤ 15 V Tj = 150 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Fast IGBT4 Modules Inverse diode IF Tc =25°C 65 A Tj = 175 °C SKM50GAL12T4 Tc

5.4. skm50gal123d.pdf Size:758K _igbt

SKM500GA123S
SKM500GA123S



5.5. skm50gb123d.pdf Size:758K _igbt

SKM500GA123S
SKM500GA123S



5.6. skm50gb12v.pdf Size:382K _igbt

SKM500GA123S
SKM500GA123S

SKM50GB12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tc =25°C 79 A Tj = 175 °C Tc =80°C 60 A ICnom 50 A ICRM ICRM = 3xICnom 150 A VGES -20 ... 20 V VCC = 720 V SEMITRANS® 2 tpsc VGE ≤ 15 V Tj = 125 °C 10 µs VCES ≤ 1200 V Tj -40 ... 175 °C Inverse diode IF Tc =25°C 65 A Tj = 175 °C SKM50GB12V Tc =80°C 49 A IFnom 50 A Target Da

Datasheet: SKM400GAR124D , SKM400GB062D , SKM400GB123D , SKM400GB124D , SKM40GD123D , SKM40GD124D , SKM40GDL123D , SKM500GA123D , IRG4PH50UD , SKM500GA124D , SKM500GA174D , SKM50GAL123D , SKM50GB063D , SKM50GB123D , SKM50GD063DL , SKM50GDL063DL , SKM50GH063DL .

 


SKM500GA123S
  SKM500GA123S
  SKM500GA123S
 

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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |