SKM500GA123S Specs and Replacement
Type Designator: SKM500GA123S
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 3000 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 500 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
tr ⓘ - Rise Time, typ: 170 nS
Coesⓘ - Output Capacitance, typ: 4000 pF
Package: MODULE SKM500GA123S Substitution - IGBT ⓘ Cross-Reference Search
SKM500GA123S datasheet
Specs: SKM400GAR124D, SKM400GB062D, SKM400GB123D, SKM400GB124D, SKM40GD123D, SKM40GD124D, SKM40GDL123D, SKM500GA123D, SGH80N60UFD, SKM500GA124D, SKM500GA174D, SKM50GAL123D, SKM50GB063D, SKM50GB123D, SKM50GD063DL, SKM50GDL063DL, SKM50GH063DL
Keywords - SKM500GA123S transistor spec
SKM500GA123S cross reference
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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