SKM75GAL063D Todos los transistores

 

SKM75GAL063D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SKM75GAL063D
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 350 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 50 nS
   Coesⓘ - Capacitancia de salida, typ: 500 pF
   Qgⓘ - Carga total de la puerta, typ: 180 nC
   Paquete / Cubierta: MODULE

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SKM75GAL063D Datasheet (PDF)

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skm75gal063d.pdf

SKM75GAL063D
SKM75GAL063D

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skm75gal123d.pdf

SKM75GAL063D
SKM75GAL063D

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skm75gar063d.pdf

SKM75GAL063D
SKM75GAL063D

 8.1. Size:684K  semikron
skm75gd123d.pdf

SKM75GAL063D
SKM75GAL063D

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skm75gb063d.pdf

SKM75GAL063D
SKM75GAL063D

 8.3. Size:456K  semikron
skm75gb12t4.pdf

SKM75GAL063D
SKM75GAL063D

SKM75GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 115 ATj = 175 CTc =80C 88 AICnom 75 AICRM ICRM = 3xICnom 225 AVGES -20 ... 20 VVCC = 800 VSEMITRANS2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 97 ATj = 175 CSKM75GB12T4Tc =80C 73 A

 8.4. Size:489K  semikron
skm75gb12v.pdf

SKM75GAL063D
SKM75GAL063D

SKM75GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 114 ATj = 175 CTc =80C 87 AICnom 75 AICRM ICRM = 3xICnom 225 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 97 ATj = 175 CSKM75GB12VTc =80C 73 AIFnom 75 A

 8.5. Size:592K  semikron
skm75gb124d.pdf

SKM75GAL063D
SKM75GAL063D

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skm75gb123d.pdf

SKM75GAL063D
SKM75GAL063D

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skm75gd124d.pdf

SKM75GAL063D
SKM75GAL063D

SEMITRANS MAbsolute Maximum RatingsValuesLow Loss IGBT ModulesSymbol Conditions 1)UnitsVCES 1200 VVCGR RGE = 20 k 1200 V SKM 75 GD 124 DIC Tcase = 25/60 C 90 / 75 AICM Tcase = 25/60 C; tp = 1 ms 180 / 150 AVGES 20 VPtot per IGBT, Tcase = 25 C 390 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 2500 Vhumidity DIN 40 040 Class Fclimate DIN IEC 68 T

 8.8. Size:684K  semikron
skm75gdl123d.pdf

SKM75GAL063D
SKM75GAL063D

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skm75gb173d.pdf

SKM75GAL063D
SKM75GAL063D

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skm75gb176d.pdf

SKM75GAL063D
SKM75GAL063D

Otros transistores... SKM500GA124D , SKM500GA174D , SKM50GAL123D , SKM50GB063D , SKM50GB123D , SKM50GD063DL , SKM50GDL063DL , SKM50GH063DL , TGAN20N135FD , SKM75GAL123D , BRG60N65D , SKM75GB063D , SKM75GB123D , SKM75GB124D , SKM75GB173D , SKM75GD123D , SKM75GD124D .

 

 
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