SKM75GAL063D Specs and Replacement
Type Designator: SKM75GAL063D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 500 pF
Package: MODULE SKM75GAL063D Substitution - IGBT ⓘ Cross-Reference Search
SKM75GAL063D datasheet
Specs: SKM500GA124D, SKM500GA174D, SKM50GAL123D, SKM50GB063D, SKM50GB123D, SKM50GD063DL, SKM50GDL063DL, SKM50GH063DL, IRG4PC50U, SKM75GAL123D, BRG60N65D, SKM75GB063D, SKM75GB123D, SKM75GB124D, SKM75GB173D, SKM75GD123D, SKM75GD124D
Keywords - SKM75GAL063D transistor spec
SKM75GAL063D cross reference
SKM75GAL063D equivalent finder
SKM75GAL063D lookup
SKM75GAL063D substitution
SKM75GAL063D replacement
History: SKM75GB063D | AUIRGP4062D-E | SKM75GB124D
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
s9014 transistor | bc547 transistor datasheet | c945 datasheet | irfp260 | ksc2383 | 2n3773 | b772 transistor | 50n06