SKM75GDL123D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SKM75GDL123D
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

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SKM75GDL123D Datasheet (PDF)

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skm75gdl123d.pdf

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skm75gd123d.pdf

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skm75gd124d.pdf

SEMITRANS MAbsolute Maximum RatingsValuesLow Loss IGBT ModulesSymbol Conditions 1)UnitsVCES 1200 VVCGR RGE = 20 k 1200 V SKM 75 GD 124 DIC Tcase = 25/60 C 90 / 75 AICM Tcase = 25/60 C; tp = 1 ms 180 / 150 AVGES 20 VPtot per IGBT, Tcase = 25 C 390 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 2500 Vhumidity DIN 40 040 Class Fclimate DIN IEC 68 T

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skm75gb063d.pdf

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skm75gb12t4.pdf

SKM75GB12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 115 ATj = 175 CTc =80C 88 AICnom 75 AICRM ICRM = 3xICnom 225 AVGES -20 ... 20 VVCC = 800 VSEMITRANS2tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 97 ATj = 175 CSKM75GB12T4Tc =80C 73 A

8.3. Size:489K semikron
skm75gb12v.pdf

SKM75GB12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 114 ATj = 175 CTc =80C 87 AICnom 75 AICRM ICRM = 3xICnom 225 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 2tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 97 ATj = 175 CSKM75GB12VTc =80C 73 AIFnom 75 A

8.4. Size:786K semikron
skm75gar063d.pdf