SKM75GDL123D Datasheet and Replacement
Type Designator: SKM75GDL123D
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 390 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 56 nS
Coesⓘ - Output Capacitance, typ: 500 pF
Package: MODULE
- IGBT Cross-Reference
SKM75GDL123D Datasheet (PDF)
skm75gd124d.pdf
SEMITRANS MAbsolute Maximum RatingsValuesLow Loss IGBT ModulesSymbol Conditions 1)UnitsVCES 1200 VVCGR RGE = 20 k 1200 V SKM 75 GD 124 DIC Tcase = 25/60 C 90 / 75 AICM Tcase = 25/60 C; tp = 1 ms 180 / 150 AVGES 20 VPtot per IGBT, Tcase = 25 C 390 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 2500 Vhumidity DIN 40 040 Class Fclimate DIN IEC 68 T
Datasheet: SKM75GAL123D , BRG60N65D , SKM75GB063D , SKM75GB123D , SKM75GB124D , SKM75GB173D , SKM75GD123D , SKM75GD124D , CRG75T60AK3HD , SM2G100US120 , SM2G100US60 , SM2G150US120 , SM2G150US60 , SM2G200US120 , SM2G200US60 , SM2G300US60 , SM2G400US60 .
History: MMG600WB065TLA6EN | CM75TU-12F | APTGT25DA120D1 | RJH1CF4RDPQ-80 | MMG400K120U6TN | IRG4ZH71KD | FD400R33KF2C
Keywords - SKM75GDL123D transistor datasheet
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History: MMG600WB065TLA6EN | CM75TU-12F | APTGT25DA120D1 | RJH1CF4RDPQ-80 | MMG400K120U6TN | IRG4ZH71KD | FD400R33KF2C
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