FGD3N60LSD Todos los transistores

September 2006 FGD3N60LSD tm IGBT Features Description High Current Capability Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applica- Very Low Saturation Voltage VCE(sat) = 1.2 V @ IC = 3A tions where very low On-Voltage Drop is a required feature. High Input Impedance Applications HID Lamp App

FGD3N60LSD IGBT Description ON Semiconductor's Insulated Gate Bipolar Transistors Features (IGBTs) provide very low conduction losses. The device is High Current Capability designed for applica-tions where very low On-Voltage Drop is a required feature. Very Low Saturation Voltage VCE(sat) = 1.2 V @ IC = 3A High Input Impedance Applications HID Lamp Applications

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur