All IGBT. FGD3N60LSD Datasheet

 

FGD3N60LSD IGBT. Datasheet pdf. Equivalent

Type Designator: FGD3N60LSD

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.2V

Maximum Collector Current |Ic|, A: 6.0A

Rise Time, nS: 0

Package: TO252(DPAK)

FGD3N60LSD Transistor Equivalent Substitute - IGBT Cross-Reference Search

FGD3N60LSD Datasheet (PDF)

1.1. fgd3n60lsd.pdf Size:872K _fairchild_semi

FGD3N60LSD
FGD3N60LSD

September 2006 FGD3N60LSD tm IGBT Features Description High Current Capability Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applica- Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A tions where very low On-Voltage Drop is a required feature. High Input Impedance Applications HID Lamp Applications

Datasheet: FGA50N100BNTD , FGA50N100BNTD2 , FGA60N60UFD , FGA90N33ATD , FGAF40N60UF , FGAF40N60UFD , FGB20N60SF , FGB20N60SFD , GT60M101 , FGD4536 , FGH20N60SFD , FGH20N60UFD , FGH25N120FTDS , FGH30N120FTD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD .

 


FGD3N60LSD
  FGD3N60LSD
  FGD3N60LSD
  FGD3N60LSD
 
FGD3N60LSD
  FGD3N60LSD
  FGD3N60LSD
  FGD3N60LSD
 

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IGBT: SIGC05T60SNC | SIGC04T65E | SIGC04T60GSE | SIGC04T60GS | SIGC04T60GE | SIGC04T60G | SIGC04T60E | SIGC04T60 | SIGC03T60SNC | SIGC03T60SE |

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