FGH25N120FTDS Todos los transistores

 

FGH25N120FTDS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGH25N120FTDS
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 313 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 41 nS
   Coesⓘ - Capacitancia de salida, typ: 135 pF
   Qgⓘ - Carga total de la puerta, typ: 169 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

FGH25N120FTDS Datasheet (PDF)

 ..1. Size:705K  fairchild semi
 fgh25n120ftds.pdf pdf_icon

FGH25N120FTDS

June 2009tmFGH25N120FTDS1200V, 25A Field Stop Trench IGBTFeatures General Description High speed switching Using advanced field stop trench technology, Fairchilds 1200Vtrench IGBTs offer superior conduction and switching perfor- Low saturation voltage: VCE(sat) = 1.60V @ IC = 25Amances, and easy parallel operation with exceptional avalanche High input impedanceru

 ..2. Size:442K  onsemi
 fgh25n120ftds.pdf pdf_icon

FGH25N120FTDS

IGBT - Field Stop, Trench1200 V, 25 AFGH25N120FTDSDescriptionUsing advanced field stop trench technology, ON Semiconductors1200 V trench IGBTs offer the optimum performance for hardwww.onsemi.comswitching application such as solar inverter, UPS, welder and PFCapplications.CFeatures High Speed Switching Low Saturation Voltage: VCE(sat) =1.60 V @ IC = 25 AG

Otros transistores... FGAF40N60UF , FGAF40N60UFD , FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , IRG7S313U , FGH30N120FTD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD .

 

 
Back to Top

 


 
.