FGH25N120FTDS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGH25N120FTDS
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 313 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 41 nS
Coesⓘ - Capacitancia de salida, typ: 135 pF
Paquete / Cubierta: TO247
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FGH25N120FTDS Datasheet (PDF)
fgh25n120ftds.pdf
June 2009tmFGH25N120FTDS1200V, 25A Field Stop Trench IGBTFeatures General Description High speed switching Using advanced field stop trench technology, Fairchilds 1200Vtrench IGBTs offer superior conduction and switching perfor- Low saturation voltage: VCE(sat) = 1.60V @ IC = 25Amances, and easy parallel operation with exceptional avalanche High input impedanceru
fgh25n120ftds.pdf
IGBT - Field Stop, Trench1200 V, 25 AFGH25N120FTDSDescriptionUsing advanced field stop trench technology, ON Semiconductors1200 V trench IGBTs offer the optimum performance for hardwww.onsemi.comswitching application such as solar inverter, UPS, welder and PFCapplications.CFeatures High Speed Switching Low Saturation Voltage: VCE(sat) =1.60 V @ IC = 25 AG
Otros transistores... FGAF40N60UF , FGAF40N60UFD , FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , HGTG30N60A4 , FGH30N120FTD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD .
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