FGH25N120FTDS Todos los transistores

 

FGH25N120FTDS IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGH25N120FTDS

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 313 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

trⓘ - Tiempo de subida, typ: 41 nS

Coesⓘ - Capacitancia de salida, typ: 135 pF

Encapsulados: TO247

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FGH25N120FTDS datasheet

 ..1. Size:705K  fairchild semi
 fgh25n120ftds.pdf pdf_icon

FGH25N120FTDS

June 2009 tm FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT Features General Description High speed switching Using advanced field stop trench technology, Fairchild s 1200V trench IGBTs offer superior conduction and switching perfor- Low saturation voltage VCE(sat) = 1.60V @ IC = 25A mances, and easy parallel operation with exceptional avalanche High input impedance ru

 ..2. Size:442K  onsemi
 fgh25n120ftds.pdf pdf_icon

FGH25N120FTDS

IGBT - Field Stop, Trench 1200 V, 25 A FGH25N120FTDS Description Using advanced field stop trench technology, ON Semiconductor s 1200 V trench IGBTs offer the optimum performance for hard www.onsemi.com switching application such as solar inverter, UPS, welder and PFC applications. C Features High Speed Switching Low Saturation Voltage VCE(sat) =1.60 V @ IC = 25 A G

Otros transistores... FGAF40N60UF , FGAF40N60UFD , FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , TGAN40N60FD , FGH30N120FTD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD .

History: SKM75GB12V | SKM150GB12VG

 

 

 


 
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