FGH25N120FTDS PDF Spec and Replacement, IGBT Equivalent Finder, Cross Reference

FGH25N120FTDS PDF Specs and Replacement

   Type Designator: FGH25N120FTDS
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 313 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   tr ⓘ - Rise Time, typ: 41 nS
   Coesⓘ - Output Capacitance, typ: 135 pF
   Package: TO247

FGH25N120FTDS Substitution

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FGH25N120FTDS PDF specs

..1. Size:705K fairchild semi
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June 2009 tm FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT Features General Description High speed switching Using advanced field stop trench technology, Fairchild s 1200V trench IGBTs offer superior conduction and switching perfor- Low saturation voltage VCE(sat) = 1.60V @ IC = 25A mances, and easy parallel operation with exceptional avalanche High input impedance ru... See More ⇒

..2. Size:442K onsemi
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IGBT - Field Stop, Trench 1200 V, 25 A FGH25N120FTDS Description Using advanced field stop trench technology, ON Semiconductor s 1200 V trench IGBTs offer the optimum performance for hard www.onsemi.com switching application such as solar inverter, UPS, welder and PFC applications. C Features High Speed Switching Low Saturation Voltage VCE(sat) =1.60 V @ IC = 25 A G ... See More ⇒

Specs: FGAF40N60UF , FGAF40N60UFD , FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , TGAN40N60FD , FGH30N120FTD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD .