All IGBT. FGH25N120FTDS Datasheet

 

FGH25N120FTDS Datasheet and Replacement


   Type Designator: FGH25N120FTDS
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 313 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 41 nS
   Coesⓘ - Output Capacitance, typ: 135 pF
   Package: TO247
 

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FGH25N120FTDS Datasheet (PDF)

 ..1. Size:705K  fairchild semi
 fgh25n120ftds.pdf pdf_icon

FGH25N120FTDS

June 2009tmFGH25N120FTDS1200V, 25A Field Stop Trench IGBTFeatures General Description High speed switching Using advanced field stop trench technology, Fairchilds 1200Vtrench IGBTs offer superior conduction and switching perfor- Low saturation voltage: VCE(sat) = 1.60V @ IC = 25Amances, and easy parallel operation with exceptional avalanche High input impedanceru

 ..2. Size:442K  onsemi
 fgh25n120ftds.pdf pdf_icon

FGH25N120FTDS

IGBT - Field Stop, Trench1200 V, 25 AFGH25N120FTDSDescriptionUsing advanced field stop trench technology, ON Semiconductors1200 V trench IGBTs offer the optimum performance for hardwww.onsemi.comswitching application such as solar inverter, UPS, welder and PFCapplications.CFeatures High Speed Switching Low Saturation Voltage: VCE(sat) =1.60 V @ IC = 25 AG

Datasheet: FGAF40N60UF , FGAF40N60UFD , FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , IRG7S313U , FGH30N120FTD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD .

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