FGH25N120FTDS IGBT. Datasheet pdf. Equivalent
Type Designator: FGH25N120FTDS
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 313 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 41 nS
Coesⓘ - Output Capacitance, typ: 135 pF
Package: TO247
FGH25N120FTDS Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGH25N120FTDS Datasheet (PDF)
fgh25n120ftds.pdf
June 2009tmFGH25N120FTDS1200V, 25A Field Stop Trench IGBTFeatures General Description High speed switching Using advanced field stop trench technology, Fairchilds 1200Vtrench IGBTs offer superior conduction and switching perfor- Low saturation voltage: VCE(sat) = 1.60V @ IC = 25Amances, and easy parallel operation with exceptional avalanche High input impedanceru
fgh25n120ftds.pdf
IGBT - Field Stop, Trench1200 V, 25 AFGH25N120FTDSDescriptionUsing advanced field stop trench technology, ON Semiconductors1200 V trench IGBTs offer the optimum performance for hardwww.onsemi.comswitching application such as solar inverter, UPS, welder and PFCapplications.CFeatures High Speed Switching Low Saturation Voltage: VCE(sat) =1.60 V @ IC = 25 AG
Datasheet: FGAF40N60UF , FGAF40N60UFD , FGB20N60SF , FGB20N60SFD , FGD3N60LSD , FGD4536 , FGH20N60SFD , FGH20N60UFD , GT60N321 , FGH30N120FTD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD .
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