FGH25N120FTDS Datasheet. Specs and Replacement

Type Designator: FGH25N120FTDS  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 313 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 41 nS

Coesⓘ - Output Capacitance, typ: 135 pF

Package: TO247

  📄📄 Copy 

 FGH25N120FTDS Substitution

- IGBTⓘ Cross-Reference Search

 

FGH25N120FTDS datasheet

 ..1. Size:705K  fairchild semi
 fgh25n120ftds.pdf pdf_icon

FGH25N120FTDS

June 2009 tm FGH25N120FTDS 1200V, 25A Field Stop Trench IGBT Features General Description High speed switching Using advanced field stop trench technology, Fairchild s 1200V trench IGBTs offer superior conduction and switching perfor- Low saturation voltage VCE(sat) = 1.60V @ IC = 25A mances, and easy parallel operation with exceptional avalanche High input impedance ru... See More ⇒

 ..2. Size:442K  onsemi
 fgh25n120ftds.pdf pdf_icon

FGH25N120FTDS

IGBT - Field Stop, Trench 1200 V, 25 A FGH25N120FTDS Description Using advanced field stop trench technology, ON Semiconductor s 1200 V trench IGBTs offer the optimum performance for hard www.onsemi.com switching application such as solar inverter, UPS, welder and PFC applications. C Features High Speed Switching Low Saturation Voltage VCE(sat) =1.60 V @ IC = 25 A G ... See More ⇒

Specs: FGAF40N60UF, FGAF40N60UFD, FGB20N60SF, FGB20N60SFD, FGD3N60LSD, FGD4536, FGH20N60SFD, FGH20N60UFD, TGAN40N60FD, FGH30N120FTD, FGH30N60LSD, FGH40N60SF, FGH40N60SFD, FGH40N60SMD, FGH40N60SMDF, FGH40N60UF, FGH40N60UFD

Keywords - FGH25N120FTDS transistor spec

 FGH25N120FTDS cross reference
 FGH25N120FTDS equivalent finder
 FGH25N120FTDS lookup
 FGH25N120FTDS substitution
 FGH25N120FTDS replacement