FGP5N60LS Todos los transistores

 

FGP5N60LS IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGP5N60LS
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 83 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 1.6 nS
   Coesⓘ - Capacitancia de salida, typ: 28 pF
   Paquete / Cubierta: TO220
 

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Principales características: FGP5N60LS

 ..1. Size:246K  fairchild semi
fgp5n60ls.pdf pdf_icon

FGP5N60LS

February 2010 FGP5N60LS tm 600V, 5A Field Stop IGBT Features General Description High Current Capability Using novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for HID bal- Low Saturation Voltage VCE(sat) =1.7V @ IC = 5A last where low conduction losses are essential. High Input Impedance RoHS Compliant Appl

 ..2. Size:393K  onsemi
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FGP5N60LS

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , GT30J127 , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , SGS5N150UF .

 

 
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