FGP5N60LS Datasheet. Specs and Replacement

Type Designator: FGP5N60LS  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 83 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 10 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 1.6 nS

Coesⓘ - Output Capacitance, typ: 28 pF

Package: TO220

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FGP5N60LS datasheet

 ..1. Size:246K  fairchild semi
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FGP5N60LS

February 2010 FGP5N60LS tm 600V, 5A Field Stop IGBT Features General Description High Current Capability Using novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for HID bal- Low Saturation Voltage VCE(sat) =1.7V @ IC = 5A last where low conduction losses are essential. High Input Impedance RoHS Compliant Appl... See More ⇒

 ..2. Size:393K  onsemi
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FGP5N60LS

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Specs: FGH60N60SMD, FGH60N60UFD, FGH75N60UF, FGH80N60FD, FGH80N60FD2, FGL35N120FTD, FGL60N100BNTD, FGP20N60UFD, GT30J127, FGPF4533, FGPF4536, FGPF4633, FGPF50N33BT, FGY75N60SMD, SGF23N60UF, SGP10N60RUFD, SGS5N150UF

Keywords - FGP5N60LS transistor spec

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