FGP5N60LS Datasheet and Replacement
Type Designator: FGP5N60LS
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 83 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 10 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 1.6 nS
Coesⓘ - Output Capacitance, typ: 28 pF
Qg ⓘ - Total Gate Charge, typ: 18.3 nC
Package: TO220
FGP5N60LS substitution
FGP5N60LS Datasheet (PDF)
fgp5n60ls.pdf

February 2010FGP5N60LStm600V, 5A Field Stop IGBTFeatures General Description High Current Capability Using novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for HID bal- Low Saturation Voltage: VCE(sat) =1.7V @ IC = 5Alast where low conduction losses are essential. High Input Impedance RoHS CompliantAppl
fgp5n60ls.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , IXGH60N60 , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , SGS5N150UF .
Keywords - FGP5N60LS transistor datasheet
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