FGP5N60LS Spec and Replacement
Type Designator: FGP5N60LS
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 83 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 10 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 1.6 nS
Coesⓘ - Output Capacitance, typ: 28 pF
Package: TO220
FGP5N60LS Transistor Equivalent Substitute - IGBT Cross-Reference Search
FGP5N60LS specs
fgp5n60ls.pdf
February 2010 FGP5N60LS tm 600V, 5A Field Stop IGBT Features General Description High Current Capability Using novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for HID bal- Low Saturation Voltage VCE(sat) =1.7V @ IC = 5A last where low conduction losses are essential. High Input Impedance RoHS Compliant Appl... See More ⇒
fgp5n60ls.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Specs: FGH60N60SMD , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , GT30J127 , FGPF4533 , FGPF4536 , FGPF4633 , FGPF50N33BT , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , SGS5N150UF .
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