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FGPF50N33BT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGPF50N33BT

Tipo de transistor: IGBT

Polaridad de transistor: N-Channel

Tensión máxima colector-emisor |Vce|, V: 330

Colector de Corriente Continua a 25℃ |Ic|, A: 50

Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.6

Paquete / Cubierta: TO220F

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FGPF50N33BT Datasheet (PDF)

 ..1. Size:655K  fairchild semi
fgpf50n33bt.pdf

FGPF50N33BT FGPF50N33BT

April 2009FGPF50N33BTtm330V, 50A PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series oftrench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) =1.6V @ IC = 50Ations where low conduction and switching losses are essential. High input impedance Fast switching

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