FGPF50N33BT Specs and Replacement
Type Designator: FGPF50N33BT
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 43 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 33 nS
Coesⓘ - Output Capacitance, typ: 70 pF
Package: TO220F
FGPF50N33BT Substitution
FGPF50N33BT datasheet
fgpf50n33bt.pdf
April 2009 FGPF50N33BT tm 330V, 50A PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchild s new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage VCE(sat) =1.6V @ IC = 50A tions where low conduction and switching losses are essential. High input impedance Fast switching ... See More ⇒
Specs: FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , CRG40T60AN3H , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , SGS5N150UF , NGB15N41CL , NGB18N40CLB , NGB8202AN , NGB8202N .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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