All IGBT. FGPF50N33BT Datasheet

 

FGPF50N33BT Datasheet and Replacement


   Type Designator: FGPF50N33BT
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 43 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.3 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 33 nS
   Coesⓘ - Output Capacitance, typ: 70 pF
   Qgⓘ - Total Gate Charge, typ: 35 nC
   Package: TO220F
      - IGBT Cross-Reference

 

FGPF50N33BT Datasheet (PDF)

 ..1. Size:655K  fairchild semi
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FGPF50N33BT

April 2009FGPF50N33BTtm330V, 50A PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series oftrench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) =1.6V @ IC = 50Ations where low conduction and switching losses are essential. High input impedance Fast switching

Datasheet: FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , CRG40T60AN3H , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , SGS5N150UF , NGB15N41CL , NGB18N40CLB , NGB8202AN , NGB8202N .

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