FGPF50N33BT PDF and Equivalents Search

 

FGPF50N33BT Specs and Replacement


   Type Designator: FGPF50N33BT
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 43 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   tr ⓘ - Rise Time, typ: 33 nS
   Coesⓘ - Output Capacitance, typ: 70 pF
   Package: TO220F
 

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FGPF50N33BT datasheet

 ..1. Size:655K  fairchild semi
fgpf50n33bt.pdf pdf_icon

FGPF50N33BT

April 2009 FGPF50N33BT tm 330V, 50A PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchild s new series of trench IGBTs offer the optimum performance for PDP applica- Low saturation voltage VCE(sat) =1.6V @ IC = 50A tions where low conduction and switching losses are essential. High input impedance Fast switching ... See More ⇒

Specs: FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , CRG40T60AN3H , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , SGS5N150UF , NGB15N41CL , NGB18N40CLB , NGB8202AN , NGB8202N .

Keywords - FGPF50N33BT transistor spec

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