All IGBT. FGPF50N33BT Datasheet

 

FGPF50N33BT IGBT. Datasheet pdf. Equivalent


   Type Designator: FGPF50N33BT
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 43 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.3 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 33 nS
   Coesⓘ - Output Capacitance, typ: 70 pF
   Qgⓘ - Total Gate Charge, typ: 35 nC
   Package: TO220F

 FGPF50N33BT Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGPF50N33BT Datasheet (PDF)

 ..1. Size:655K  fairchild semi
 fgpf50n33bt.pdf

FGPF50N33BT FGPF50N33BT

April 2009FGPF50N33BTtm330V, 50A PDP IGBTFeatures General Description High current capability Using Novel Trench IGBT Technology, Fairchilds new series oftrench IGBTs offer the optimum performance for PDP applica- Low saturation voltage: VCE(sat) =1.6V @ IC = 50Ations where low conduction and switching losses are essential. High input impedance Fast switching

Datasheet: FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS , FGPF4533 , FGPF4536 , FGPF4633 , IXGH60N60 , FGY75N60SMD , SGF23N60UF , SGP10N60RUFD , SGS5N150UF , NGB15N41CL , NGB18N40CLB , NGB8202AN , NGB8202N .

 

 
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