FGY75N60SMD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGY75N60SMD  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 750 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃

trⓘ - Tiempo de subida, typ: 56 nS

Coesⓘ - Capacitancia de salida, typ: 390 pF

Encapsulados: POWER-247

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FGY75N60SMD datasheet

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 fgy75n60smd.pdf pdf_icon

FGY75N60SMD

June 2014 FGY75N60SMD 600 V, 75 A Field Stop IGBT Features General Description High Current Capability Using novel field stop IGBT technology, Fairchild s new series of field stop 2nd generation IGBTs offer the optimum perfor- Low Saturation Voltage VCE(sat) = 1.9 V @ IC = 75 A mance for solar inverter, UPS, welder and PFC applications High Input Impedance where low co

 9.1. Size:658K  onsemi
 fgy75t95lqdt.pdf pdf_icon

FGY75N60SMD

IGBT - Field Stop, Trench 75 A, 950 V Product Preview FGY75T95LQDT Trench Field Stop 4th generation Low Vcesat IGBT co-packaged with full current rated diode. www.onsemi.com Features Maximum Junction Temperature TJ = 175 75 A, 950 V Positive Temperature Co-efficient for Easy Parallel Operating VCESat = 1.31 V (Typ.) High Current Capability C Low Saturation Vol

 9.2. Size:585K  onsemi
 fgy75t95sqdt.pdf pdf_icon

FGY75N60SMD

IGBT - Field Stop, Trench 75 A, 950 V Product Preview FGY75T95SQDT Trench Field Stop 4th generation High Speed IGBT co-packaged with full current rated diode. www.onsemi.com Features Maximum Junction Temperature TJ = 175 75 A, 950 V Positive Temperature Co-efficient for Easy Parallel Operating VCESat = 1.69 V (Typ.) High Current Capability C Low Saturation Vol

 9.3. Size:618K  onsemi
 fgy75t120sqdn.pdf pdf_icon

FGY75N60SMD

FGY75T120SQDN Ultra Field Stop IGBT, 1200 V, 75 A General Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides www.onsemi.com superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for UPS and solar appli

MOSTRAR MÁS

Otros transistores... FGL35N120FTD, FGL60N100BNTD, FGP20N60UFD, FGP5N60LS, FGPF4533, FGPF4536, FGPF4633, FGPF50N33BT, RJP30H2A, SGF23N60UF, SGP10N60RUFD, SGS5N150UF, NGB15N41CL, NGB18N40CLB, NGB8202AN, NGB8202N, NGB8204N